Gallium Nitride Semiconductor Devices Market is Expected to Witness Rapid Growth 2022 - 2030

The global gallium nitride semiconductor devices market size is expected to reach USD 12.47 billion by 2030, according to a new study conducted by Grand View Research, Inc. It is expected to expand at a CAGR of 24.4% from 2022 to 2030. The growing demand for fast chargers used in various consumer electronics applications worldwide is expected to drive the market. Various smartphone companies such as Apple and Samsung are making efforts to develop fast chargers to enhance their customer experience and gain a competitive edge.

The companies providing GaN Radio Frequency (RF) are continuously improving their product offerings, thereby driving the market. For instance, in December 2021, Microchip Technology Inc., a microcontroller manufacturer, announced the expansion of its GaN RF power device portfolio with new discrete transistors and MMICs. The devices combine high linearity and high power-added efficiency to deliver enhanced performance in satellite communications, electronic warfare, test equipment, and commercial and defense radar systems.

Gallium Nitride Semiconductor Devices Market Segmentation

Grand View Research has segmented the global Gallium Nitride (GaN) semiconductor devices market based on product, component, wafer size, end-use, and region:

Based on the Product Insights, the market is segmented into GaN Radio Frequency Devices, Opto-semiconductors and Power Semiconductors.

• The opto-semiconductors segment dominated the market in 2021 and accounted for more than 35.0% share of the global revenue.
• This can be largely attributed to the application of opto-semiconductors in devices such as LEDs, solar cells, photodiodes, lasers, and optoelectronics.
• The GaN radio frequency devices segment is anticipated to expand at the highest CAGR over the forecast period.

Based on the Component Insights, the market is segmented into Transistor, Diode, Rectifier, Power IC and Others.

• The transistor segment dominated the market in 2021 and accounted for more than 35.0% share of the global revenue.
• Compared to silicon-based transistors, GaN-based transistors are efficient and functional at high power density and high switch frequency, resulting in a greater share of the transistor segment in 2021.
• The power IC segment is anticipated to witness steady growth over the forecast period.

Based on the Wafer Size Insights, the market is segmented into 2-inch, 4-inch, 6-inch and 8-inch.

• The 4-inch segment dominated the market in 2021 and accounted for more than 35.0% share of the global revenue. This is because 4-inch wafers facilitate the large-scale production of semiconductor devices.
• The implementation of 4-inch wafers is increasing rapidly as these wafers help overcome the limitations of 2-inch wafers and are widely used in semiconductor product-based industries.
• The 6-inch segment is anticipated to expand at the highest CAGR over the forecast period. Benefits such as uniform voltage supply and precise current control offered by 6-inch wafers are driving the segment.

Based on the End-use Insights, the market is segmented into Automotive, Consumer Electronics, Defense & Aerospace, Healthcare, Industrial & Power, Information & Communication Technology and Others.

• The Information & Communication Technology (ICT) segment dominated the market in 2021 and accounted for more than 20.0% share of the global revenue.
• The segment growth can be attributed to the increasing adoption of Internet-of-Things (IoT) technology globally.
• These semiconductors are widely used in Distributed Antenna System (DAS), small cell, and remote radio head network densification. They are also used in data centers, servers, base stations, transmission lines, satellite communication, and base transceiver stations, among others.

Gallium Nitride Semiconductor Devices Regional Outlook

• North America
• Europe
• Asia Pacific
• Latin America
• Middle East & Africa (MEA)

Key Companies Profile & Market Share Insights

The industry is characterized by the presence of dominant players holding a significant market share. The key players are opting for strategic partnerships, collaborations, and mergers & acquisitions to acquire a greater market share and the necessary capabilities for manufacturing GaN-based semiconductors. For instance, in March 2019, Cree, Inc. completed the acquisition of Advanced Technology Materials Corp., a manufacturer of GaN semiconductor devices. With this acquisition, the company extended its geographical presence in China.

Some prominent players in the Global Gallium Nitride Semiconductor Devices market include:

• Cree, Inc.
• Efficient Power Conversion Corporation
• Fujitsu Ltd.
• GaN Systems
• Infineon Technologies AG
• NexgenPowerSystems
• NXP Semiconductor
• Qorvo, Inc.
• Texas Instruments Incorporated
• Toshiba Corporation

Order a free sample PDF of the in Gallium Nitride Semiconductor Devices Market Intelligence Study, published by Grand View Research.